Arrhythmias & electrophysiology
Uniform slow conduction during sinus rhythm and low voltage/low voltage gradient ΔV/V characterize the ventricular tachycardia (VT) isthmus location
Authors' conclusion
A low-voltage trench coincides with the VT isthmus, vs abrupt voltage increase at the lateral boundaries, which may contravene prior definitions of conducting channels. Sinus rhythm uniform slow conduction occurs at the VT isthmus location, preventing circuit disruption while enabling the formation of an excitable gap to perpetuate reentry.
Study context
- Population
- Postinfarction VT patients undergoing electrophysiology study and catheter ablation, high-density endocardial contact mappingsinus rhythm n = 6, VT n = 12
- Comparison
- VT isthmus vs lateral boundaries and non-isthmus spokes
- Outcome
- VT isthmus vs boundaries/other spokes: bipolar voltage, voltage gradient ΔV/V, sinus rhythm activation uniformity (r2) and gradient (∇)
Main finding
As reported in the abstract
Mean voltage, isthmus long-axis vs aside boundaries
0.234 ± 0.137 mV vs 0.383 ± 0.290 mV
P < .001
Gradient ΔV/V, isthmus long-axis vs boundaries
0.425 ± 0.324 vs 0.823 ± 0.550
P < .001
Sinus rhythm activation uniformity, isthmus midline spoke vs other spokes (mean r2)
0.93 ± 0.05 vs 0.32 ± 0.25
P < .001
Sinus rhythm activation gradient, isthmus midline spoke vs other spokes (∇)
0.16 ± 0.03 mm/msec vs 0.73 ± 0.62 mm/msec
P = .003
Original publication
Composed by AI from the published abstract and checked against it. How Briefs are made →